200-300MHz 20W GaN RF Power Jammer Module with Circulator, N-Female for RF Test, EMC Simulation, Public Safety & Anti-UAV System
Product Descriptions
This 200-300MHz 20W GaN RF power module adopts high-performance GaN transistor and is integrated with a circulator for enhanced protection against reflected power, improving the stability and service life of the whole system. Equipped with N-Female connector, it features compact structure, high output power and good linearity, easy to integrate into your custom RF systems. Working within 200–300MHz VHF band, this module is widely used for RF performance testing, EMC simulation, receiver anti-interference verification, public safety projects and anti-UAV system integration. It serves as an ideal RF power source for spectrum test, wireless communication simulation and critical site security deployment.
Product Features
- Frequency band: 200-300MHz
- GaN chip, stable 20W (43dBm) output
- Built-in integrated circulator for better isolation
- N female RF connector for easy assembly
- Compact aluminum alloy housing with good heat dissipation
- Customizable frequency band and output power as requested
Product Specifications
| Frequency Range | 200-300MHz |
| Operating Voltage | 24 V DC |
| Flatness | ±0.5 dB |
| Output Power | 20 W/43 dBm |
| Current Consumption | 2.5 A@24 V |
| Efficiency | 45%@43 dBm |
| LED State | Red |
| Operating Temperature | -30℃ ~ +85℃ |
| Storage Temperature | -40℃ ~ +150℃ |
| Operating Humidity | <95%RH |
| RF Connector | Output: N-Female |
| Power Socket | 20 cm red/black wire |
| Shell Material | Aluminum |
| Shell Size | 128.5*53*17 mm |
| Net Weight | 0.26 kg |
Package List
1 x N-type GaN+Circulator Jammer Module